VS-HFA210NJ60CPBF www.vishay.com vishay semiconductors revision: 28-oct-16 1 document number: 94062 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hexfred ? ultrafast soft recovery diode, 210 a features ? very low q rr and t rr ? ul approved file e222165 ? designed and qualified for industrial level ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 benefits ? reduced rfi and emi ? reduced snubbing description hexfred ? diodes are optimized to reduce losses and emi/rfi in high frequency po wer conditioning systems. an extensive characterization of the recovery behavior for different values of cu rrent, tempera ture and di f /dt simplifies the calculations of losses in the operating conditions. the softness of the recovery eliminates the need for a snubber in most applications. these devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. product summary i f(av) 210 a v r 600 v i f(dc) at t c 120 a at 100 c package to-244 (to-244ab) circuit two diodes common cathode ba s e common cathode lug terminal anode 1 lug terminal anode 2 to-244 absolute maximum ratings parameter symbol test conditions max. units cathode to anode voltage v r 600 v continuous forward current i f t c = 25 c 235 a t c = 100 c 120 single pulse forward current i fsm limited by junction temperature 600 non-repetitive avalanche energy e as l = 100 h, duty cycle limited by maximum t j 2.2 mj maximum power dissipation p d t c = 25 c 463 w t c = 100 c 185 operating junction and storage ? temperature range t j , t stg -55 to +150 c electrical specifications per leg (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units cathode to anode ? breakdown voltage v br i r = 100 a 600 - - v maximum forward voltage v fm i f = 105 a see fig. 1 - 1.38 1.9 i f = 210 a - 1.6 2.25 i f = 105 a, t j = 125 c - 1.3 1.56 maximum reverse leakage current i rm t j = 125 c, v r = 480 v see fig. 2 - 1.8 6.0 ma junction capacitance c t v r = 200 v see fig. 3 - 200 300 pf series inductance l s from top of terminal hole to mounting plane -6.0-nh
VS-HFA210NJ60CPBF www.vishay.com vishay semiconductors revision: 28-oct-16 2 document number: 94062 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) mounting surface must be smooth, flat, free of burrs or other protrusions. apply a thin even film or thermal grease to mounting surface. ? gradually tighten each mounting bolt in 5 to 10 lbf ?? in steps until desired or maxi mum torque limits are reached ? ? fig. 1 - maximum forward voltage drop vs. instantaneous forward current (per leg) fig. 2 - typical reverse current vs. reverse voltage (per leg) dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time (fig. 5) t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v -35- ns t j = 25 c i f = 105 a ? di f /dt = 200 a/s ? v r = 200 v - 90 140 t j = 125 c - 160 240 peak recovery current (fig. 6) i rrm t j = 25 c -1018 a t j = 125 c -1530 reverse recovery charge (fig. 7) q rr t j = 25 c - 450 1300 nc t j = 125 c - 1200 3600 peak rate of recovery current (fig. 8) di (rec)m /dt t j = 25 c - 310 - a/s t j = 125 c - 240 - thermal - mechanical specifications parameter symbol min. typ. max. units maximum junction and storage temperature range t j , t stg -55 - 150 c thermal resistance, junction to case per leg r thjc - - 0.27 c/w k/w per module - - 0.135 typical thermal resistance, case to heatsink r thcs -0.10- weight -68- g -2.4-oz. mounting torque (1) 30 (3.4) - 40 (4.6) lbf in (n m) mounting torque center hole 12 (1.4) - 18 (2.1) terminal torque 30 (3.4) - 40 (4.6) vertical pull --80 lbf ?? in 2" lever pull --35 1 10 0.2 3.2 1.2 1.7 v fm - forward voltage drop (v) i f - instantaneous forward current (a) 100 0.7 2.2 2.7 1000 t j = 150 c t j = 125 c t j = 25 c 0.1 1 10 100 1000 10 000 100 v r - reverse voltage (v) i r - reverse current (a) 200 400 500 600 300 t j = 150 c t j = 125 c t j = 25 c
VS-HFA210NJ60CPBF www.vishay.com vishay semiconductors revision: 28-oct-16 3 document number: 94062 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical junction capacitance vs. reverse voltage (per leg) fig. 4 - maximum allowable case temperature vs. dc forward current (per leg) fig. 5 - typical reverse recovery time vs. di f /dt (per leg) fig. 6 - - typical recovery current vs. di f /dt (per leg) fig. 7 - - typical stored charge vs. di f /dt (per leg) fig. 8 - - typical di (rec)m /dt vs. di f /dt (per leg) 1000 10 000 1 10 100 1000 100 10 v r - reverse voltage (v) c t - junction capacitance (pf) t j = 25 c 8 0 160 0 100 250 0 i f(av) - dc forward current (a) maximum allowable case temperature (c) 140 120 100 60 40 20 50 150 200 dc 40 100 1000 di f /dt (a/s) t rr (ns) 80 160 120 240 200 200 a, 125 c 105 a, 125 c 200 a, 25 c 105 a, 25 c 40 a, 125 c 40 a, 25 c 100 1 100 1000 di f /dt (a/s) i rrm (a) 10 200 a, 25 c 105 a, 25 c 40 a, 25 c 200 a, 125 c 105 a, 125 c 40 a, 125 c 4000 100 1000 di f /dt (a/s) q rr (nc) 2000 2500 1000 1500 3000 3500 0 500 200 a, 125 c 105 a, 125 c 200 a, 25 c 105 a, 25 c 40 a, 125 c 40 a, 25 c 1000 100 100 1000 di f /dt (a/s) di (rec)m /dt (a/s) 10 000 200 a, 25 c 105 a, 25 c 40 a, 25 c 200 a, 125 c 105 a, 125 c 40 a, 125 c
VS-HFA210NJ60CPBF www.vishay.com vishay semiconductors revision: 28-oct-16 4 document number: 94062 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - - maximum thermal impedance z thjc characteristics (per leg) fig. 10 - - reverse recovery parameter test circuit fig. 11 - reverse recovery waveform and definitions 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal response 0.001 10 single pulse (thermal response) d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
VS-HFA210NJ60CPBF www.vishay.com vishay semiconductors revision: 28-oct-16 5 document number: 94062 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 12 - avalanche test circuit and waveforms ordering information table v (a v al) v r(rated) i l(pk) decay time c u rrent monitor high-speed s w itch d.u.t. r g = 25 + free w heel diode v d = 50 v l = 100 h links to related documents dimensions www.vishay.com/doc?95021 - hexfred ? family, electron irradiated - average current rating - nj = to-244 - voltage rating (60 = 600 v) - c = common cathode - lead (pb)-free device code hfa 210 nj 60 c pbf 1 2 3 4 5 6 7 6 2 1 4 3 5 7 - vishay semiconductors product vs-
outline dimensions www.vishay.com vishay semiconductors revision: 24-apr-15 1 document number: 95021 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-244 dimensions in millimeters (inches) 3 2 3 1 ? 5.2 (? 0.20) 9.6 (0.37) min. 93 (3.66) max. ?" - 20 unc 80 (3.15) 40 (1.57) 13 (0.51) 35 (1.37) ref. 7 (0.27) 6 (0.23) 17.5 (0.69) 16.5 (0.65) 21 (0.82) 20 (0.78) ? 7.2 (? 0.28) (2 places) 12.6 (0.5)
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